高增益双层组合GaAs光电导开关设计与实验研究

设计制备了一种由双层半绝缘GaAs:EL2晶体组成的新型超快光电导功率开关.由于触发状态下双层GaAs晶体之间满足动态分压关系,使该开关在强电场偏置下触发时,双层GaAs晶体既能先后发生高增益过程,又能相互抑制对方进入锁定状态,开关输出为近似方波的双峰脉冲.因此,这种开关的工作方式既具有非线性模式特有的所需触发光能小、上升速度快等优点,又具有线性模式特有的重复工作频率高、使用寿命长等优点.偏压6500V时用脉宽8ns、能量3mJ的1064nm激光触发,输出电脉冲的上升沿为13.2ns,下降沿为54.6ns 关键词： 光电半导体开关 高增益 锁定效应     

System Size Resonance Associated with Canard Phenomenon in a Biological Cell System

通过研究发现,内噪声对细胞内钙振荡是有影响的,当体系处于由确定性方程所确定的稳定区域时,如果考虑内噪声的作用,就会有随机的钙振荡发生. 并且这种振荡的行为随着体系尺度的变化出现两个最大值,表明了尺度共振现象的发生. 这种行为是与体系的Canard现象密切相关的. 最佳的体系尺度与真实的细胞体积是相吻合的,并且这种吻合基本不随控制参数的改变而改变.     

支持向量回归同时测定苯甲酸和水杨酸稳健模型的研究

按照均匀设计方法设计校正集实验数据,用支持向量回归方法(SVR)建立校正模型,采用留一交叉验证方法对SVR方法的参数进行优化,研究SVR稳健模型在分光光度法同时测定苯甲酸和水杨酸中的应用.结果表明,用不同日期测定的校正集数据建立SVR模型,对不同日期测定的检验集数据的预测结果也不同;检验集数据的测定日期与校正集数据的测定日期愈接近,则预测结果愈准确;将不同日期测定的校正集数据合并在一起建立SVR模型,模型的稳健性得到了明显的提高;将选定的校正集用于苯甲酸和水杨酸的同时测定,预测结果的回收率在97%-102%之间,结果满意.     

Fluorinated nanoporous SiO2 films with ultra-low dielectric constant

Fluorinated nanoporous silica (denoted as SiO₂:F) thin films with low dielectric constant were prepared by a sol-gel method and spin coating technique. The leakage current densities of the SiO₂:F thin films were 10⁻⁸ and 3 × 10⁻⁶ A/cm² respectively for the as-deposited films and for those subjected to annealing at a temperature of 450 °C. These currents are more than one order of magnitude lower than those of the common SiO₂ films. Photoluminescent results showed strong blue-light emission and a small blue shift in the SiO₂:F films that were related to the increment of the porosity. The dielectric properties were also characterized and the k value of the annealed SiO₂:F film was found to be about 1.67. The hole size in the films is small and the size distribution is uniform for the annealed SiO₂:F samples due to the effects of fluorination. The underlying mechanism for fluorination is discussed in this paper.     

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge₂Sb₂Te₅ thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10⁷ to 10³ Ω/□ at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge₂Sb₂Te₅ films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 × 10^?3 and 2.725 Ω m, sheet resistance is 3.37 × 10⁴ and 2.725 × 10⁷ Ω/□ respectively, deduced from the I–V curves that is obtained by conductive atomic force microscope (C-AFM).     

Facile fabrication of oxygen-doped carbon nitride with enhanced visible-light photocatalytic degradation of methyl mercaptan

Research on Chemical Intermediates - Element doping has demonstrated an effective strategy for enhancing photocatalytic performance of carbon nitride (CN). Herein, we reported that oxygen-doped CN...     

Periodic solutions of a periodic stochastic human immunodeficiency virus model with distributed delay and cytotoxic T lymphocytes immune response

In this paper, a periodic stochastic human immunodeficiency virus (HIV) model with distributed delay and cytotoxic T lymphocytes (CTL) immune response is investigated. First, by It $ô$'s formula, we show that the solution with any positive initial value is global and positive. Then, by the stochastic comparison theorem, we obtain the sufficient conditions guaranteeing the existence and global attractivity of infection-free periodic solution. Furthermore, we discuss the existence of the infective periodic solution by Has'minskii theory. Finally, numerical examples are given to illustrate the results.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Halogen bond between hypervalent halogens YF3/YF5 (Y=Cl,Br, I) and H2X (X= O,S, Se)

ABSTRACT

The complexes of H₂X (X?=?O, S, Se) with hypervalent halogens YF₃ and YF₅ (Y?=?Cl, Br, I) have been studied. The σ-hole on the Y atom participates in a halogen bond with the lone pair on the chalcogen atom. In addition, some secondary interactions coexist with the halogen bond in most complexes. The interaction energy correlates with the nature of both X and Y atoms. In most cases, the complex is more stable for the heavier Y atom and the lighter X atom. Of course, there are some exceptions in H₂X···YF₃. YF₃ forms a more stable complex with H₂X than does YF₅. These complexes are dominated by electrostatic interaction and the halogen bond involving H₂S and H₂Se exhibits some covalent character.

Halogen bond plays an important role in chemical reactions and multivalent halogens can regulate chemical reactions by participating in a halogen bond. Thus we compare the effect of the chalcogen electron donor on the strength and nature of halogen bonding involving multivalent halogens.